قائمة الطعام
(PDF) Amorphization of selenium induced by ball milling an XAFS study. PDF | The extended X ray absorption fine structure (EXAFS) and respective near edge …
The absorption coefficient of amorphous selenium has been measured in the ultra-violet, visible and near infra-red spectral regions. The transmission coefficients of several single …
The diffraction peaks of Cu–Ta nanolaminates are mainly located at 33.8° and 43.3°, corresponding to β -Ta (002) and α -Cu (111), respectively. Besides, a halo peak appears at 2θ ≈ 38.9°, indicating the formation of an amorphous structure (A1). The intensity of both β -Ta and α -Cu decreases progressively as the decreasing of λ.
We have measured at room temperature (RT) the Fourier-transform infra-red (FTIR) absorption spectra of ion-irradiated thin epitaxial films of cubic silicon carbide (3C–SiC) with 1.1 µm thickness on a 500 µm thick (1 0 0) silicon wafer substrate.Irradiations were carried out at RT with 2.3 MeV 28 Si + ions and 3.0 MeV 84 Kr + ions for various …
Surface amorphization provides electrocatalysts with more active sites and flexibility. However, there is still a lack of experimental observations and mechanistic explanations for the in situ ...
Orientational disorder: A mechanism of amorphization at high pressure, T. Sakuntala, A. K. Arora, N. V. Chandra Shekar, P. Ch. Sahu
Here, we demonstrate a new process to fabricate tensily strained Si On Insulator substrates (sSOI). The process is based on the epitaxial growth of Si 1-x Ge x on SOI substrate, the partial amorphization and crystallization of the Si/Si 1-x Ge x bilayers and the selective removal of the top Si 1-x Ge x film. Si tensile stress higher than 1.4 …
In state-of-the-art FinFETs, Ge pre-amorphization implantation (Ge PAI) has been widely employed into TiSi x-based contacts to successfully achieve extremely low ρ c, 15,16) which has the benefits of point defect annihilation, silicidation enhancement and smooth interface. 17–20) In this work, the Co/Co-Ti/n +-Si contacts with and without Ge ...
Studies have shown that the crystallization phase state of Ge 2 Sb 2 Te 5 (GST) can be reversibly modulated by femtosecond (fs) laser multiple pulses, which have excellent applications in reconfigurable multi-level operation fields. In this study, the temporal-spatial crystalline evolution dynamics of amorphous GST film is investigated …
The amorphization process has been explained by different models, and most of the theoretical treatments utilize a thermal spike model (i.e. a hot region around the ion trajectory containing a high concentration of excited electron carriers), which relies on local melting of the material caused by superheating in the thermal spike [11–16]. It ...
8-inch p-type (100) silicon wafers with 10–12 Ω-cm resistivity were used as the starting material. All wafers were implanted by phosphorus (P) at 8 keV to a dosage of 3 × 10 15 cm −2, followed by dopant activation using 1050°C spike annealing.Afterwards, Ge PAI at 6 different conditions shown in Table I was employed in order to amorphize the …
With a specific electrochemical capacity of 3579 mAh g Si −1, silicon is a promising candidate for next generation Li-ion batteries, as it exceeds the capacity of commonly used graphite by a factor of 10. 1,2 However, large volume changes upon (de-)alloying up to ∼300 % lead to mechanical stress in the active material resulting in …
Abstract. The nanoinstability of a single crystal Si nanowire under electron beam irradiation was in situ investigated at room temperature by the transmission electron microscopy technique. It was observed that the Si nanowire amorphized preferentially from the surface towards the center, with the increasing of the electron dose.
Molecular dynamics simulation of structural and dynamic properties of selenium structures with different degrees of amorphization. To cite this article: C …
Influence of amorphization–recrystallization processes on distribution of selenium and oxygen atoms implanted in silicon. Tishkovsky Feklistov Alexey Zatolokin. …
Figure 6 shows the enthalpy of amorphization for gamma-indomethacin per molecule and per gram at different temperatures. The solid lines indicate the experimental values of heat fusion in both units. These experimental values are compared with enthalpy of amorphization at the melting temperature, 85 J g −1, resulting in good agreement. At ...
Abstract. We performed ion irradiation experiments on diamond samples at room temperature, probed by in-situ Raman spectroscopy. Different ions are used with energies of 200 or 400 keV. The intensity of diamond Raman band (at 1332 cm −1) decreases exponentially as the ion fluence increases. Results from different ions …
Calorimetric evidences indicate that during cryogenic-temperature milling amorphization procedure is faster than that at ambient temperature. Our experimental …
Molecular dynamics simulation of structural and dynamic properties of selenium structures with different degrees of amorphization - IOPscience. Journal of …
Selenium-Rich Configuration and Amorphization for Synergistically Maximizing the Active-Center Amount of CoSe1+x Nanodots toward Efficient Photocatalytic H2 …
The potential increase in amorphization E * is set to be 0.15 V, corresponding to a surface energy gap of 0.3225 eV/atom. This has the same order of magnitude as the energy gap between amorphous and crystalline bulk silicon. 29, 30 The values of reference current densities varies dramatically in the literatures, 17, 31 – 33 …
Phase-change memory (PCM) is a key enabling technology for non-volatile electrical data storage at the nanometer scale. A PCM device consists of a small active volume of phase-change material sandwiched between two electrodes. In PCM, data is stored by using the electrical resistance contrast between a high-conductive crystalline …
A strong absorption peak in 532 nm is founded during the amorphization and the energy level corresponded is about 0.65~3.82 eV by calculations. First-Principles Calculations simulation experiments are used to prove the results of experiment and then explain the mechanism of amorphization of GST.
In this work, the effects of Ge pre-amorphization implantation (PAI) on forming ultrathin TiGe x films at 350–600 °C are explored. It is found that the Ge PAI indeed enhances the formation of TiGe x at relatively low temperature, as confirmed by the lower sheet resistance and thicker TiGe x films compared to the case without Ge PAI. The …
Abstract. The trend of miniaturization has highlighted the problems of heat dissipation and electromigration in nanoelectronic device interconnects, but not amorphization. While amorphization is known to be a high pressure and/or temperature phenomenon, we argue that defect density is the key factor, while temperature and …
The amorphization and etching gases are argon and SF 6, respectively, and are switched during the whole process in the presence of oxygen gas. The amorphization cycle time is 15 s and the Ar flow rate is kept constant at a value of 75 sccm. The etching cycle time is 10 s and the SF 6 flow rate is kept constant at a value of …
On the Manifestation of Ge Pre-Amorphization Implantation (PAI) in Forming Ultrathin TiSi x for Ti Direct Contact on Si in Sub-16/14 nm Complementary Metal-Oxide-Semiconductor (CMOS) Technology Nodes Shu-Juan Mao 1, Jing Xu 1, Gui-Lei Wang 1, Jun Luo 4,1,2, Ning-Yuan Duan 1, Eddy Simoen 3, Henry Radamson 1, Wen …
The fully crystalline selenium was submitted to amorphization by intensive milling in a planetary ball mill Pulversette 7 produced by FRITSCH. Milling was carried out in two grinding vials of 25 ccm volume containing 5 balls with diameter of 12 mm. Both the vials and balls were made of stainless CrNi steel. The milling conditions were changed ...
Special attention is paid to the relationship between local amorphization processes and deformation micromechanisms in crystalline and quasi-crystalline solids. In particular, theoretical models are proposed, which describe the new deformation micromechanism, related to solid state amorphization, as that capable of causing high …
5. Conclusions. We have shown that FTIR spectroscopy can be used to follow the damage induced in (1 0 0) 3C–SiC thin epitaxial films on a (1 0 0) Si substrate by heavy ion irradiations (2.3 MeV 28 Si + and 3.0 MeV 84 Kr + ). The whole layers were damaged homogeneously, whereas ions were implanted in the Si substrates.
حقوق النشر ©2000- 2024 شركة شنغهاي زينيث
